Infineon IPC100N04S5-1R9: High-Performance 40V OptiMOS Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPC100N04S5-1R9 stands out as a premier solution, encapsulating the advanced engineering of Infineon's OptiMOS™ power MOSFET technology. This device is specifically designed to meet the rigorous demands of modern applications, from automotive systems to industrial motor drives and high-density DC-DC converters.

At its core, this MOSFET is a 40V N-channel power transistor housed in a SuperSO8 package (PG-TSDSON-8), which is renowned for its excellent power density and thermal characteristics. The part number suffix "1R9" is a direct indicator of its ultra-low on-state resistance (RDS(on)), which is a mere 1.9 mΩ maximum at 10 V (VGS). This exceptionally low RDS(on) is a critical figure of merit, as it directly translates to minimal conduction losses. When a MOSFET is in its on-state, it behaves like a small resistor. A lower resistance means less power is wasted as heat, leading to significantly higher efficiency in the system. This is particularly crucial in battery-operated devices or any application where energy conservation is a priority.

Beyond its stellar DC performance, the IPC100N04S5-1R9 excels in switching performance. The OptiMOS technology platform ensures low gate charge (Qg) and outstanding figure-of-merit (FOM = RDS(on) × Qg). A low gate charge means the device can be turned on and off very quickly with minimal drive energy, reducing switching losses. This combination of low conduction and switching losses allows designers to push for higher switching frequencies, which in turn enables the use of smaller passive components like inductors and capacitors, leading to more compact and cost-effective final designs.

The SuperSO8 package plays a vital role in unlocking the full potential of the silicon. It offers a very low thermal resistance (RthJC) from junction to case, facilitating efficient heat transfer away from the die. This robust thermal performance ensures the device can operate reliably under continuous high-current stress, making it ideal for demanding environments like automotive engine control units (ECUs), brake systems, and powertrain applications.

Furthermore, the device is 100% avalanche tested, guaranteeing ruggedness and durability in the face of voltage spikes and unpredictable transient events that are common in real-world operating conditions. This robustness provides designers with a critical margin of safety and enhances the long-term reliability of the end product.

ICGOO FIND: The Infineon IPC100N04S5-1R9 is a benchmark in power MOSFET performance, offering an unparalleled blend of ultra-low RDS(on), superior switching characteristics, and exceptional thermal management in a compact package. It is an optimal choice for designers aiming to maximize efficiency and power density in their next-generation 40V applications.

Keywords:

OptiMOS

Low RDS(on)

Power Efficiency

SuperSO8

Automotive Grade