Infineon IPG20N04S4L-11 OptiMOS™ Power MOSFET: Key Features and Application Benefits

The Infineon IPG20N04S4L-11 is a member of the renowned OptiMOS™ power MOSFET family, engineered to deliver superior performance in a wide array of power conversion applications. This 40V N-channel MOSFET is designed with a strong emphasis on extremely low on-state resistance (R DS(on)) and high current handling capability, making it an ideal choice for demanding automotive, industrial, and consumer systems.

A standout feature of this device is its remarkably low R DS(on) of just 1.8 mΩ (max) at 10 V (V GS). This ultra-low resistance is fundamental to minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. By operating cooler, systems can achieve greater reliability and potentially require less complex thermal management, leading to lower overall system costs and a more compact design.

Furthermore, the IPG20N04S4L-11 is characterized by its high peak current capability, supporting up to 200 A. This makes it exceptionally robust for handling high inrush currents, a common requirement in motor control and power management circuits. The device is also housed in an PQFN 5x6 (SMD) package, which offers an excellent footprint-to-performance ratio. This package type enhances thermal performance by allowing efficient heat dissipation from the bottom of the package to the PCB, further supporting high-power operation in space-constrained applications.

The benefits of these features are realized across numerous applications. In automotive systems, such as electric power steering (EPS), braking systems, and transmission control units, the MOSFET’s high efficiency and reliability are critical for safety and performance. For industrial applications, including low-voltage motor drives, DC-DC converters, and load switches, the combination of low R DS(on) and a thermally efficient package ensures stable operation under strenuous conditions. Additionally, in server and computing power supplies, this component contributes to achieving higher power densities and meeting 80 Plus efficiency standards.

ICGOOFind: The Infineon IPG20N04S4L-11 OptiMOS™ MOSFET sets a high standard for power switching with its industry-leading low on-resistance and exceptional current handling in a compact package. It is a pivotal component for designers aiming to push the boundaries of efficiency, power density, and reliability in modern electronic systems.

Keywords: Low RDS(on), High Current Capability, Power Efficiency, Thermal Performance, Automotive Applications.