Infineon IPC100N04S5-1R7: A High-Performance 40V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPC100N04S5-1R7 stands as a testament to these principles, representing a significant advancement in power MOSFET technology. This device is part of Infineon's esteemed OptiMOS™ 5 family, engineered to deliver exceptional efficiency and power density in a wide array of applications, from server and telecom power supplies to motor drives and battery management systems.

At its core, the IPC100N04S5-1R7 is a N-channel power MOSFET built on an advanced silicon process. Its defining characteristic is a remarkably low maximum on-state resistance (RDS(on)) of just 1.0 mΩ at 10 V. This ultra-low resistance is the primary contributor to its high efficiency, as it minimizes conduction losses, leading to less energy wasted as heat. This allows for cooler operation, which in turn can reduce the size and cost of associated cooling systems, enhancing overall system reliability.

The device is rated for a drain-source voltage (VDS) of 40 V, making it an ideal choice for handling lower voltage bus systems commonly found in modern computing and industrial equipment, such as 12 V and 24 V rails. It can handle a continuous drain current (ID) of up to 100 A at a case temperature of 100°C, showcasing its robust current-handling capabilities. The part number suffix "-1R7" indicates it is supplied in Infineon’s superior 1.7mm x 1.7mm SuperSO8 (SSO8) package. This compact footprint offers a drastically reduced parasitics and an improved thermal resistance (RthJC) compared to standard packages, enabling higher power density designs and more efficient PCB layout.

Furthermore, the OptiMOS™ 5 technology provides excellent switching performance, characterized by low gate charge (Qg) and figures of merit that optimize both switching and conduction losses. This makes the MOSFET highly suitable for high-frequency switching applications, allowing designers to push the boundaries of frequency to shrink magnetic components and further increase power density.

ICGOO

The Infineon IPC100N04S5-1R7 is a premier solution for designers seeking to maximize efficiency and power density. Its combination of an ultra-low RDS(on), high current capability, and advanced packaging makes it a superior choice for demanding power conversion tasks, setting a new benchmark for performance in the 40V MOSFET class.

Keywords:

1. Ultra-low RDS(on)

2. High Power Density

3. OptiMOS™ 5 Technology

4. SuperSO8 Package

5. High Efficiency