**HMC580ST89ETR: A 6 GHz to 10 GHz GaAs pHEMT MMIC Low Noise Amplifier**

The **HMC580ST89ETR** is a high-performance **GaAs pHEMT MMIC Low Noise Amplifier (LNA)** designed to operate within the **6 GHz to 10 GHz frequency range**. This device is engineered to meet the demanding requirements of modern microwave systems, including point-to-point and point-to-multi-point radios, SATCOM, radar, and test equipment. Its core architecture leverages the advantages of Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT) technology, which provides an excellent combination of low noise figure and high gain, making it an ideal solution for receiver front-ends.

A key performance metric for any LNA is its noise figure, and the HMC580ST89ETR excels in this regard. It achieves an **impressively low noise figure of 1.8 dB** across much of its operational bandwidth. This characteristic is paramount for enhancing the sensitivity of a receiver chain, as it ensures that the amplifier adds minimal inherent noise to the desired signal, thereby preserving the signal-to-noise ratio (SNR) critical for clear data transmission and reception.

Complementing its low noise performance is its high linearity and gain. The amplifier delivers a **high gain of 18 dB**, which helps to suppress the noise contribution from subsequent stages in the system. Furthermore, it offers a superior **output IP3 of +26 dBm**, indicating excellent linearity and the ability to handle strong interfering signals without generating significant intermodulation distortion. This makes the device robust in spectrally dense environments.

Housed in a compact, RoHS-compliant **4 mm x 4 mm, 16-lead LFCSP package**, the HMC580ST89ETR is designed for surface-mount technology (SMT), facilitating automated assembly and reducing board space. It requires a single positive supply voltage ranging from +3V to +5V, drawing a typical current of 68 mA, which aligns with the power constraints of many portable and fixed-infrastructure applications. The inclusion of DC blocking capacitors on both the RF input and output ports simplifies integration into the final system design.

**ICGOOODFIND**: The HMC580ST89ETR stands out as a superior solution for X-band and other microwave applications, offering an optimal blend of ultra-low noise, high gain, and outstanding linearity in a miniature surface-mount package, ensuring enhanced receiver performance.

**Keywords**: Low Noise Amplifier, GaAs pHEMT, MMIC, High Linearity, Microwave Frequency.