**HMC951LP4ETR: A 24 GHz Wideband GaAs pHEMT MMIC Low Noise Amplifier for High-Frequency Applications**
The relentless drive for higher data rates and more sophisticated sensing capabilities continues to push the operational frequencies of electronic systems into the millimeter-wave (mmWave) spectrum. At these frequencies, the performance of the signal chain's first active component is paramount, setting the stage for overall system sensitivity and noise figure. The **HMC951LP4ETR** stands as a critical solution in this domain: a **monolithic microwave integrated circuit (MMIC)** low noise amplifier engineered to excel in the challenging 24 GHz band and beyond.
Fabricated on an advanced **Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT)** process, the HMC951LP4ETR is inherently designed for high-frequency operation. The pHEMT technology provides an exceptional combination of **low noise figure and high gain**, which are often competing parameters. This amplifier delivers a remarkably low noise figure of **2.0 dB** while achieving a high small-signal gain of **20 dB** across its wide operational bandwidth from 17 to 26 GHz. This wideband performance makes it exceptionally versatile, suitable for a range of applications beyond its primary target, including point-to-point radio, satellite communication, and electronic warfare systems.
A key feature of the HMC951LP4ETR is its high linearity, characterized by an output third-order intercept point (OIP3) of +26 dBm. This ensures that the amplifier can handle strong interfering signals without generating significant intermodulation distortion, thereby preserving the integrity of the desired weak signals it is designed to amplify. The MMIC is also internally matched to 50 Ohms, simplifying board design and integration by minimizing the need for external matching components. Housed in a compact, RoHS-compliant 4x4 mm LP4 surface-mount package, it is ideal for space-constrained commercial and aerospace applications.
The amplifier requires a single positive supply voltage between +3V and +5V, drawing a nominal current of 80 mA, which aligns with the power constraints of modern systems. It incorporates bias sequencing circuitry, enhancing its robustness and ease of use in complex designs. Furthermore, it is offered in a tape-and-reel format, making it compatible with high-volume, automated assembly processes.
**ICGOOODFIND**: The HMC951LP4ETR is a high-performance MMIC LNA that effectively addresses the critical need for **low noise and high gain in the 24 GHz millimeter-wave band**. Its excellent linearity, wide bandwidth, and integration-friendly design make it a superior choice for advancing next-generation communication, radar, and test equipment.
**Keywords**: **Low Noise Amplifier (LNA)**, **Millimeter-wave (mmWave)**, **GaAs pHEMT**, **High Gain**, **Wideband Amplifier**
