Infineon IRLB3034PBF N-Channel HEXFET Power MOSFET: Key Specifications and Applications

Release date:2025-11-05 Number of clicks:66

Infineon IRLB3034PBF N-Channel HEXFET Power MOSFET: Key Specifications and Applications

The Infineon IRLB3034PBF is a highly efficient N-Channel HEXFET Power MOSFET renowned for its robust performance in high-current switching applications. Utilizing advanced processing technology, this MOSFET is engineered to deliver extremely low on-state resistance and high switching speed, making it an ideal choice for power management solutions across various industries.

A standout feature of the IRLB3034PBF is its exceptionally low drain-source on-resistance (RDS(on)) of just 1.7 mΩ at a gate-source voltage of 10 V. This minimal resistance significantly reduces conduction losses, enhancing overall system efficiency and thermal performance. The device is capable of handling a continuous drain current (ID) of up to 195 A at a case temperature of 25°C, demonstrating its ability to manage high power levels effectively. With a drain-source voltage (VDS) rating of 40 V, it is well-suited for applications operating at common bus voltages such as 24 V systems. Furthermore, its low gate charge (Qg) and high avalanche ruggedness ensure reliable operation under demanding switching conditions, including those with inductive loads.

The combination of these characteristics makes the IRLB3034PBF extremely versatile. It is widely used in high-efficiency DC-DC converters for computing and telecommunications infrastructure, where minimizing energy loss is critical. In the automotive sector, it is frequently employed in motor control systems, including electric power steering (EPS), brake systems, and other high-current drivers. Additionally, it serves as a key component in power inverters and uninterruptible power supplies (UPS), where robust switching and thermal stability are required. Its TO-220AB package offers excellent thermal conductivity, facilitating easy mounting on heat sinks for improved power dissipation.

ICGOOODFIND: The Infineon IRLB3034PBF stands out as a superior power MOSFET due to its ultra-low RDS(on), high current capability, and reliability in demanding environments. It is a cornerstone component for designers seeking to optimize efficiency and performance in high-power switching applications.

Keywords: Low RDS(on), High Current Switching, Power Management, Motor Control, DC-DC Converters.

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