Infineon IAUT150N10S5N035: High-Performance 100V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IAUT150N10S5N035 stands as a testament to these ideals, representing a significant advancement in MOSFET technology. As part of Infineon's esteemed OptiMOS™ 5 100V family, this power MOSFET is engineered to deliver exceptional efficiency in a wide range of applications, from server and telecom power supplies to industrial motor drives and solar inverters.

The core of its high-performance capability lies in its superior figure-of-merit (R DS(on) x Q G). With an ultra-low maximum on-state resistance (R DS(on)) of just 1.5 mΩ, this device minimizes conduction losses significantly. This allows for more power to be delivered to the load with less energy wasted as heat. Concurrently, its optimized gate charge (Q G) ensures switching losses are drastically reduced, enabling higher switching frequencies. This combination is crucial for designers aiming to create smaller, more power-dense, and cooler-running systems without compromising on performance.

Packaged in the robust TOLL (TO-Leadless) package, the IAUT150N10S5N035 offers more than just electrical superiority. This package features an extremely low parasitic inductance and an efficient thermal path due to its exposed top side and bottom side cooling capability. This dual-sided cooling potential is a key enabler for managing thermal loads in space-constrained applications, leading to higher reliability and longer system lifespans. Furthermore, the leadless design enhances switching performance and simplifies PCB layout.

ICGOOFind concludes that the Infineon IAUT150N10S5N035 is a top-tier component that sets a new benchmark for 100V power MOSFETs. Its blend of ultra-low R DS(on), fast switching characteristics, and an advanced thermally efficient package makes it an ideal solution for modern high-efficiency power conversion systems.

Keywords: OptiMOS™ 5, R DS(on), TOLL Package, Power Efficiency, Switching Losses.