High-Power Density Design with Infineon IKW40T120 TRENCHSTOP™ IGBTs

The relentless pursuit of higher efficiency and power density is a defining trend in modern power electronics. Applications ranging from industrial motor drives and renewable energy systems to uninterruptible power supplies (UPS) and welding equipment demand solutions that deliver more power from a smaller footprint while minimizing losses. At the heart of achieving this goal lies the intelligent selection of switching devices. Infineon's IKW40T120 TRENCHSTOP™ IGBTs represent a pivotal technology enabling engineers to push the boundaries of power density.

The IKW40T120 is a 1200 V, 40 A IGBT co-packaged with an anti-parallel diode in a TO-247 package. Its exceptional performance stems from Infineon's advanced TRENCHSTOP™ technology. This proprietary structure significantly enhances the trade-off between saturation voltage (Vce(sat)) and switching losses, a critical factor for high-frequency operation. A lower Vce(sat) translates directly to reduced conduction losses, which is paramount for maintaining high efficiency, especially at high current levels. Simultaneously, the technology enables rapid and clean switching characteristics, which are essential for minimizing turn-on and turn-off losses.

These characteristics are the cornerstone of high-power density design. By operating at higher switching frequencies, designers can drastically reduce the size of passive components like inductors and capacitors, which often dominate the volume of a power converter. The ability of the IKW40T120 to switch efficiently at elevated frequencies allows for this crucial miniaturization. Furthermore, the low thermal resistance of the package ensures that heat generated from power losses is effectively transferred to the heatsink. This superior thermal management is non-negotiable for reliable operation in compact designs where heat flux is extremely high.

The integrated reverse diode offers an additional advantage by optimizing the commutation loop, which improves overall system reliability and reduces parasitic inductance. When deployed in topologies such as power factor correction (PFC) stages, two-level or three-phase inverters, these IGBTs contribute to a system-wide reduction in energy waste. This allows for the creation of compact, lightweight, and highly efficient power converters that meet ever-increasing market demands for performance and size reduction.

ICGOODFIND: The Infineon IKW40T120 TRENCHSTOP™ IGBT is an exemplary solution for engineers tackling the challenges of high-power density design. Its optimal balance of low conduction and switching losses, combined with robust thermal performance and high integration, provides a critical pathway to developing next-generation power systems that are both smaller and more efficient.

Keywords:

Power Density

TRENCHSTOP™ IGBT

Switching Losses

Thermal Management

High Efficiency