Infineon IPD60R950C6: A 950V CoolMOS™ CFD7 Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. Addressing these challenges, Infineon Technologies introduces the IPD60R950C6, a 950V superjunction MOSFET from its groundbreaking CoolMOS™ CFD7 family. This transistor is engineered to set a new benchmark in performance for demanding applications, including server and telecom SMPS, industrial power supplies, and photovoltaic inverters.

At the heart of this component's innovation is its remarkable 950V drain-source voltage rating. This high voltage capability provides a crucial safety margin, enhancing system robustness and reliability in environments prone to high-voltage spikes and transients. It is particularly advantageous for power factor correction (PFC) stages and quasi-resonant flyback topologies operating directly from universal mains inputs (85 VAC – 305 VAC).

Beyond its high voltage rating, the IPD60R950C6 excels with its exceptionally low effective output capacitance (Coss,eff). This characteristic is a hallmark of the CFD7 technology and is pivotal for achieving high efficiency in hard-switching and quasi-resonant applications. The significantly reduced switching losses, especially at light loads, directly contribute to lower energy consumption and help designers meet stringent energy efficiency standards like 80 PLUS Titanium.

Furthermore, the device integrates a fast body diode with improved reverse recovery performance. This feature minimizes reverse recovery charges (Qrr), reducing switching losses and electromagnetic interference (EMI) in bridge architectures. The combination of low gate charge (Qg) and low on-state resistance (RDS(on)) of 600 mΩ ensures minimal conduction losses, enabling high switching frequencies. This, in turn, allows for the use of smaller passive components, leading to more compact and cost-effective power supply designs.

In summary, the Infineon IPD60R950C6 is not just a transistor but a comprehensive solution for pushing the boundaries of power electronics. Its blend of high-voltage ruggedness, minimal switching losses, and high-frequency operation capability makes it an ideal choice for engineers designing the next generation of high-efficiency, high-power-density systems.

ICGOODFIND: The Infineon IPD60R950C6 CoolMOS™ CFD7 represents a significant leap in high-voltage power transistor technology, offering designers a superior component to achieve unprecedented levels of efficiency and power density in demanding applications.

Keywords:

1. High-Efficiency

2. 950V Rating

3. CoolMOS™ CFD7

4. Low Switching Losses

5. Power Density